Gallium Nitride (GaN): Physics, Devices, and Technology
Gallium Nitride (GaN): Physics, Devices, and Technology offers a balanced perspective on the state of the art in gallium nitride technology.
Gallium Nitride (GaN): Physics, Devices, and Technology
物品 #: 230595493

Gallium Nitride (GaN): Physics, Devices, and Technology

物品 #: 230595493

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產品詳情

Shop Gallium Nitride (GaN): Physics, Devices, and Technology online at a best price in 香港. 1138893358
  • Gallium nitride (GaN) is a binary III/V direct bandgap semiconductor commonly used in bright light-emitting diodes since the 1990s. Its sensitivity to ionizing radiation is low, making it a suitable material for solar cell arrays for satellites. T Daha fazla göster
Publisherscrc press
Date of publicationJuly 26, 2017
Prints1.
LanguageEnglish
Print Length388 pages
ISBN-101138893358
ISBN-13978-1138893351
Dimensions15.6 x 2.24 x 23.39 cm

產品敘述

Gallium Nitride (GaN): Physics, Devices, and Technology

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  • 題: What are the advantages of GaN-based material systems?

    回答: GaN-based material systems have wide band gaps and high electron mobility, making them suitable for optoelectronic, high-power, and high-frequency devices.
  • 題: What makes GaN an ideal candidate for switching power transistors?

    回答: GaN has high off-state breakdown strength and excellent on-state channel conductivity, making it ideal for switching power transistors.
  • 題: What does the book highlight?

    回答: The book highlights the current and emerging applications of GaN in the semiconductor industry.

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